(ii) The white sample was divided into four parts and separately wasobserved by SEM (Leo5420,10[1]20keV); by TEM (H-7100,120 keV; JEM-4000,400 keV) and by HRTEM.
(ii) 将白色样品分为四份,分别用扫描电镜（leo5420,10 20 keV）、透射电镜（H-7100,120 keV；JEM -4000,400 keV）和高分辨透射电子显微镜观察.
The compositionof the product was analyzed by energy dispersive X-ray (EDX,JEM-2010).
通过能量分散型X射线（EDX,JEM-2010）分析生成物的成分.
Luminescenceexperiments were carried out by exposing the SiO2 nanowires to X-rayirradiation using a Philips set to deliver a dose of 20 Gy•min−1.
通过飞利浦仪器提供20 Gy•min−1剂量将SiO2纳米线置于X射线照射下进行了发光实验.
Theluminescence emission of the sample was measured using a high-sensitivitymultiplexed system with F/2.2 optics developed.
用开发的带F / 2.2光学器件的高灵敏度多路复用系统测量了样品的荧光发射.
Experimentswere conducted at low (25 240 K,heating rate 6K•min−1)and high (293 673 K,heating rate 50 K•min−1)temperatures.
在低温（25 240 K,加热速率6K•min−1）和高温（293 673 K,50 K•min−1）条件下进行了实验.
2.Results anddiscussion
2.结果与讨论
SEM (fig.2(a))image reveals the presence of white product on TiSi film.
扫描电镜（图2（a））图像显示TiSi膜上有白色生成物.
Under higherresolution,the white product consists of large quantities of wire-likematerials and these wires are winding,exhibiting smooth surface and uniformdiameter (ca.40 90 nm).
在更高分辨率的条件下（可以看出）,白色生成物由大量的丝状材料构成,且这些线是弯曲的,有光滑的表面和均匀的直径（约40 90 nm）.
Further HRTEMexamination shows that the nanowires are amorphous (fig.2(c)) and EDX analysesindicate that they consist solely of silicon and oxygen (fig.2(d)).
用高分辨透射电子显微镜进行进一步检查表明,纳米线为非结晶的（图2（c））,而能谱分析表明,他们只是由硅和氧（图2（d））构成的.
Computeranalyses exhibit that the Si O ratio is 1 2.Therefore,they are very longamorphous SiO2 nanowires.
计算机分析表明,Si与O的比率为1:2.因此,他们是很长的非结晶SiO2纳米线.